• image of FET、MOSFET 阵列>SSM6N48FU,LF
  • image of FET、MOSFET 阵列>SSM6N48FU,LF
SSM6N48FU,LF
MOSFET 2N-CH 30V 0.1A US6
-
卷带式 (TR)
3000
:
:

1

$0.4816

$0.4816

10

$0.3360

$3.3600

100

$0.1680

$16.8000

500

$0.1456

$72.8000

1000

$0.1008

$100.8000

3000

$0.0896

$268.8000

6000

$0.0784

$470.4000

9000

$0.0672

$604.8000

30000

$0.0672

$2,016.0000

75000

$0.0560

$4,200.0000

150000

$0.0560

$8,400.0000

image of FET、MOSFET 阵列>SSM6N48FU,LF
image of FET、MOSFET 阵列>SSM6N48FU,LF
SSM6N48FU,LF
SSM6N48FU,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 0.1A US6
-
卷带式 (TR)
2750
1
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSIII
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-TSSOP, SC-88, SOT-363
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度150°C
技术MOSFET (Metal Oxide)
功率 - 最大300mW
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C100mA (Ta)
输入电容 (Ciss)(最大值)@Vds15.1pF @ 3V
Rds On(最大)@Id、Vgs3.2Ohm @ 10mA, 4V
Vgs(th)(最大值)@Id1.5V @ 100µA
供应商设备包US6
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