• image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
  • image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
SQJB46ELP-T1_GE3
MOSFET 2N-CH 40V 30A PPAK SO8
-
卷带式 (TR)
3000
:
:

1

$1.3104

$1.3104

10

$1.0752

$10.7520

100

$0.8288

$82.8800

500

$0.7056

$352.8000

1000

$0.5712

$571.2000

3000

$0.5376

$1,612.8000

6000

$0.5152

$3,091.2000

9000

$0.4928

$4,435.2000

image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
image of FET、MOSFET 阵列>SQJB46ELP-T1_GE3
SQJB46ELP-T1_GE3
SQJB46ELP-T1_GE3
FET、MOSFET 阵列
Vishay / Siliconix
MOSFET 2N-CH 40V 30A PPAK SO8
-
卷带式 (TR)
730
1
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱PowerPAK® SO-8 Dual
安装类型Surface Mount
配置2 N-Channel
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大34W (Tc)
漏源电压 (Vdss)40V
电流 - 连续漏极 (Id) @ 25°C30A (Tc)
输入电容 (Ciss)(最大值)@Vds2100pF @ 25V
Rds On(最大)@Id、Vgs8mOhm @ 8A, 10V
栅极电荷 (Qg)(最大值)@Vgs40nC @ 10V
Vgs(th)(最大值)@Id2.2V @ 250µA
供应商设备包PowerPAK® SO-8 Dual
年级Automotive
资质AEC-Q101
captcha

86-13826519287‬
0