• image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
  • image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
  • image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
  • image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
SIZF300DT-T1-GE3
MOSFET 2N-CH 30V 23A 8POWERPAIR
-
卷带式 (TR)
3000
:
:

1

$1.3664

$1.3664

10

$1.1200

$11.2000

100

$0.8624

$86.2400

500

$0.7392

$369.6000

1000

$0.5936

$593.6000

6000

$0.5376

$3,225.6000

9000

$0.5152

$4,636.8000

image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
image of FET、MOSFET 阵列>SIZF300DT-T1-GE3
SIZF300DT-T1-GE3
SIZF300DT-T1-GE3
FET、MOSFET 阵列
Vishay / Siliconix
MOSFET 2N-CH 30V 23A 8POWERPAIR
-
卷带式 (TR)
2826
1
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET® Gen IV
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerWDFN
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
输入电容 (Ciss)(最大值)@Vds1100pF @ 15V, 3150pF @ 15V
Rds On(最大)@Id、Vgs4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
栅极电荷 (Qg)(最大值)@Vgs22nC @ 10V, 62nC @ 10V
Vgs(th)(最大值)@Id2.2V @ 250µA
供应商设备包8-PowerPair® (6x5)
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