• image of FET、MOSFET 阵列>PJQ2800_R1_00001
  • image of FET、MOSFET 阵列>PJQ2800_R1_00001
PJQ2800_R1_00001
MOSFET 2N-CH 20V 5.2A 6DFN
-
卷带式 (TR)
3000
:
:

1

$0.6496

$0.6496

10

$0.5600

$5.6000

100

$0.3920

$39.2000

500

$0.3024

$151.2000

1000

$0.2464

$246.4000

3000

$0.2240

$672.0000

6000

$0.2128

$1,276.8000

9000

$0.1904

$1,713.6000

30000

$0.1904

$5,712.0000

image of FET、MOSFET 阵列>PJQ2800_R1_00001
image of FET、MOSFET 阵列>PJQ2800_R1_00001
PJQ2800_R1_00001
PJQ2800_R1_00001
FET、MOSFET 阵列
PANJIT
MOSFET 2N-CH 20V 5.2A 6DFN
-
卷带式 (TR)
3000
1
产品参数
PDF(1)
类型描述
制造商PANJIT
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-VDFN Exposed Pad
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大1.45W (Ta)
漏源电压 (Vdss)20V
电流 - 连续漏极 (Id) @ 25°C5.2A (Ta)
输入电容 (Ciss)(最大值)@Vds515pF @ 10V
Rds On(最大)@Id、Vgs32mOhm @ 5.2A, 4.5V
栅极电荷 (Qg)(最大值)@Vgs6.3nC @ 4.5V
Vgs(th)(最大值)@Id900mV @ 250µA
供应商设备包DFN2020-6L
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