• image of 单 FET、MOSFET>DMTH46M7SFVW-7
  • image of 单 FET、MOSFET>DMTH46M7SFVW-7
  • image of 单 FET、MOSFET>DMTH46M7SFVW-7
  • image of 单 FET、MOSFET>DMTH46M7SFVW-7
DMTH46M7SFVW-7
MOSFET BVDSS: 31V~40V POWERDI333
-
卷带式 (TR)
2000
:
:

1

$0.7616

$0.7616

10

$0.6608

$6.6080

100

$0.4592

$45.9200

500

$0.3808

$190.4000

1000

$0.3248

$324.8000

2000

$0.2912

$582.4000

6000

$0.2800

$1,680.0000

10000

$0.2576

$2,576.0000

image of 单 FET、MOSFET>DMTH46M7SFVW-7
image of 单 FET、MOSFET>DMTH46M7SFVW-7
image of 单 FET、MOSFET>DMTH46M7SFVW-7
DMTH46M7SFVW-7
DMTH46M7SFVW-7
单 FET、MOSFET
Zetex Semiconductors (Diodes Inc.)
MOSFET BVDSS: 31V~40V POWERDI333
-
卷带式 (TR)
2000
1
产品参数
PDF(1)
类型描述
制造商Zetex Semiconductors (Diodes Inc.)
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerVDFN
安装类型Surface Mount, Wettable Flank
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C16.3A (Ta), 67.2A (Tc)
Rds On(最大)@Id、Vgs7.4mOhm @ 20A, 10V
功耗(最大)3.2W (Ta), 54.5W (Tc)
Vgs(th)(最大值)@Id4V @ 250µA
供应商设备包PowerDI3333-8 (SWP) Type UX
驱动电压(最大导通电阻、最小导通电阻)10V
Vgs(最大)±20V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs14.8 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds1315 pF @ 20 V
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