• image of FET、MOSFET 阵列>ALD110900APAL
  • image of FET、MOSFET 阵列>ALD110900APAL
ALD110900APAL
MOSFET 2N-CH 10.6V 8DIP
-
管子
50
:
:

1

$9.0944

$9.0944

50

$7.2688

$363.4400

100

$6.4960

$649.6000

500

$5.7344

$2,867.2000

1000

$5.1632

$5,163.2000

2000

$4.8384

$9,676.8000

image of FET、MOSFET 阵列>ALD110900APAL
image of FET、MOSFET 阵列>ALD110900APAL
ALD110900APAL
ALD110900APAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10.6V 8DIP
-
管子
0
1
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列EPAD®, Zero Threshold™
包裹管子
产品状态ACTIVE
包装/箱8-DIP (0.300", 7.62mm)
安装类型Through Hole
配置2 N-Channel (Dual) Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
输入电容 (Ciss)(最大值)@Vds2.5pF @ 5V
Rds On(最大)@Id、Vgs500Ohm @ 4V
Vgs(th)(最大值)@Id10mV @ 1µA
供应商设备包8-PDIP
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