• image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
  • image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
SIHK105N60E-T1-GE3
E SERIES POWER MOSFET WITH FAST
-
Tape & Reel (TR)
2000
:
:

1

$6.1264

$6.1264

10

$5.1408

$51.4080

100

$4.1664

$416.6400

500

$3.6960

$1,848.0000

1000

$3.1696

$3,169.6000

2000

$2.9792

$5,958.4000

image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
image of Single FETs, MOSFETs>SIHK105N60E-T1-GE3
SIHK105N60E-T1-GE3
SIHK105N60E-T1-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER MOSFET WITH FAST
-
Tape & Reel (TR)
2050
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesEF
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerBSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 10A, 10V
Power Dissipation (Max)142W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2301 pF @ 100 V
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